IPA80R1K0CEXKSA1
MOSFET N-CH 800V 3.6A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA80R1K0CEXKSA1 is an N-channel CoolMOS™ CE series Power MOSFET. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3.6A at 25°C (Tc). The IPA80R1K0CEXKSA1 offers a maximum on-resistance (Rds On) of 950mOhm at 3.6A and 10V gate-source voltage. Its through-hole mounting type, housed in a PG-TO220-FP package, makes it suitable for various applications, including power supplies, lighting, and industrial power systems. The device operates within a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 32W (Tc). Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 785 pF at 100V.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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