IPA70R750P7SXKSA1
MOSFET N-CH 700V 6.5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series IPA70R750P7SXKSA1 is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 700V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 750mOhm at 1.4A and 10V Vgs, it offers low conduction losses. The device boasts a gate charge (Qg) of 8.3 nC at 400V and input capacitance (Ciss) of 306 pF at 400V, facilitating fast switching performance. The IPA70R750P7SXKSA1 is housed in a PG-TO220-FP package with a through-hole mounting type, enabling straightforward integration into printed circuit boards. Its power dissipation capability is 21.2W (Tc), and it operates across a temperature range of -40°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, solar inverters, and industrial motor drives.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 21.2W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 306 pF @ 400 V |
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