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IPA70R450P7SXKSA1

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IPA70R450P7SXKSA1

MOSFET N-CH 700V 10A TO220

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies IPA70R450P7SXKSA1 is a 700V N-Channel CoolMOS™ P7 series power MOSFET. This component features a continuous drain current of 10A (Tc) and a maximum power dissipation of 22.7W (Tc). The IPA70R450P7SXKSA1 offers a low on-resistance of 450mOhm at 2.3A, 10V, with a gate-source threshold voltage of 3.5V (max) at 120µA. Key parameters include a gate charge (Qg) of 13.1 nC (max) and input capacitance (Ciss) of 424 pF (max) at 400V. The device is housed in a PG-TO220-FP package for through-hole mounting and operates across a temperature range of -40°C to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, switch-mode power supplies, and industrial power systems.

Additional Information

Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs450mOhm @ 2.3A, 10V
FET Feature-
Power Dissipation (Max)22.7W (Tc)
Vgs(th) (Max) @ Id3.5V @ 120µA
Supplier Device PackagePG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds424 pF @ 400 V

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