IPA65R660CFDXKSA2
MOSFET N-CH 700V 6A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R660CFDXKSA2 is a CoolMOS™ CFD2 series N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage of 700V and a continuous drain current of 6A at 25°C. The Rds(on) is specified at a maximum of 660mOhm at an Id of 2.1A and Vgs of 10V. Gate charge (Qg) is 22 nC maximum at 10V, and input capacitance (Ciss) is 615 pF maximum at 100V. With a maximum power dissipation of 27.8W (Tc), this device is housed in a PG-TO220 Full Pack package suitable for through-hole mounting. The operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and general-purpose high-voltage switching applications across various industrial sectors.
Additional Information
Series: CoolMOS™ CFD2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
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