IPA65R660CFDXKSA1
MOSFET N-CH 650V 6A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R660CFDXKSA1 is a 650V N-Channel Power MOSFET from the CoolMOS™ series. This device features a maximum continuous drain current of 6A at 25°C and a maximum on-resistance of 660mOhm at 2.1A and 10V Vgs. With a gate charge of 22 nC at 10V and an input capacitance of 615 pF at 100V, it offers efficient switching characteristics. The device is housed in a PG-TO220-3-111 package, suitable for through-hole mounting. It has a power dissipation of 27.8W at 25°C (Tc) and an operating junction temperature range of -55°C to 150°C. This component is widely utilized in power supply applications, including server power, consumer electronics, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |