IPA65R600C6XKSA1
MOSFET N-CH 650V 7.3A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA65R600C6XKSA1 is an N-Channel CoolMOS™ Power Transistor designed for high-voltage applications. This device features a maximum drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7.3 A at 25°C (Tc). The IPA65R600C6XKSA1 offers a maximum on-resistance (Rds On) of 600 mOhm at 2.1 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 23 nC at 10 V and input capacitance (Ciss) of 440 pF at 100 V. With a maximum power dissipation of 28 W (Tc), this component is housed in a PG-TO220-3-111 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). The CoolMOS™ technology enables efficient switching performance, making it suitable for use in power factor correction (PFC) and switch-mode power supply (SMPS) designs within industrial and consumer electronics sectors.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |