IPA65R420CFDXKSA2
MOSFET N-CH 650V 8.7A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R420CFDXKSA2 is a CoolMOS™ CFD2 series N-channel power MOSFET. This device features a 650 V drain-to-source breakdown voltage and a continuous drain current (Id) of 8.7 A at 25°C (Tc), with a maximum power dissipation of 31.2 W (Tc). The on-resistance (Rds On) is specified at a maximum of 420 mOhm at 3.4 A and 10 V gate-source voltage. Gate charge (Qg) is 31.5 nC maximum at 10 V, and input capacitance (Ciss) is 870 pF maximum at 100 V. The IPA65R420CFDXKSA2 is housed in a PG-TO220-FP package for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch-mode power supplies, and lighting.
Additional Information
Series: CoolMOS™ CFD2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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