IPA65R420CFDXKSA1
MOSFET N-CH 650V 8.7A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPA65R420CFDXKSA1 is a 650V N-Channel Power MOSFET designed for high-efficiency applications. This component features a maximum continuous drain current of 8.7A at 25°C and a typical on-resistance of 420mOhm at 3.4A, 10V. The IPA65R420CFDXKSA1 offers a low gate charge of 32 nC at 10V and an input capacitance of 870 pF at 100V, contributing to reduced switching losses. Its TO-220-3 Full Pack (PG-TO220-3-111) package facilitates through-hole mounting, and it operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply units, lighting, and industrial applications where high voltage and efficiency are critical.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 340µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |