IPA65R380C6XKSA1
MOSFET N-CH 650V 10.6A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPA65R380C6XKSA1, a CoolMOS™ N-channel power MOSFET. This component features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 10.6A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 380mOhm at 3.2A and 10V. Key parameters include a gate charge (Qg) of 39 nC at 10V and an input capacitance (Ciss) of 710 pF at 100V. With a maximum power dissipation of 31W (Tc), this through-hole mounted device is packaged in a PG-TO220-3-111 configuration. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, server power, and industrial power conversion.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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