IPA65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R280E6XKSA1 is a 650V N-Channel CoolMOS™ Power Transistor. This device features a maximum continuous drain current of 13.8A at 25°C (Tc) and a low on-resistance of 280mOhm at 4.4A and 10V. With a gate charge (Qg) of 45nC (max) at 10V and input capacitance (Ciss) of 950pF (max) at 100V, it is suitable for high-frequency applications. The transistor is housed in a PG-TO220-FP package, facilitating through-hole mounting. The maximum power dissipation is rated at 32W (Tc). This component is commonly utilized in power factor correction (PFC) stages, switch-mode power supplies (SMPS), and server power supplies. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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