IPA65R225C7XKSA1
MOSFET N-CH 650V 7A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R225C7XKSA1 is a CoolMOS™ C7 series N-Channel power MOSFET. This through-hole component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 225mOhm at 4.8A and 10V gate-source voltage. With a maximum power dissipation of 29W (Tc), it is suitable for demanding applications. The IPA65R225C7XKSA1 has a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 996 pF at 400V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply units, server and telecom power, and industrial power applications. The package is PG-TO220-FP.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 996 pF @ 400 V |
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