IPA65R1K5CEXKSA1
MOSFET N-CH 650V 5.2A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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This Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPA65R1K5CEXKSA1, features a 650V drain-source voltage and a continuous drain current of 5.2A at 25°C (Tc). With a maximum on-resistance of 1.5 Ohm at 1A, 10V, this component is designed for efficient power conversion. Key parameters include a gate charge of 10.5 nC (max) at 10V and an input capacitance of 225 pF (max) at 100V. The IPA65R1K5CEXKSA1 is housed in a PG-TO220-FP package suitable for through-hole mounting and offers a maximum power dissipation of 30W (Tc). Its operating temperature range is -40°C to 150°C (TJ). This device is commonly utilized in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
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