IPA65R190E6XKSA1
MOSFET N-CH 650V 20.2A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R190E6XKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This device features a drain-source breakdown voltage (Vdss) of 650 V and a continuous drain current (Id) of 20.2 A at 25°C (Tc). The IPA65R190E6XKSA1 offers a maximum on-resistance (Rds On) of 190 mOhm at 7.3 A and a gate-source voltage (Vgs) of 10 V, with a maximum Rds On drive voltage of 10V. Key parameters include a gate charge (Qg) of 73 nC (max) at 10 V and input capacitance (Ciss) of 1620 pF (max) at 100 V. This component is housed in a PG-TO220-3-111 package with a through-hole mounting type. The maximum power dissipation (Pd) is 34 W at 25°C (Tc). The IPA65R190E6XKSA1 is suitable for applications in power factor correction, server and telecom power supplies, and industrial power systems. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
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