IPA65R190CFDXKSA1
MOSFET N-CH 650V 17.5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPA65R190CFDXKSA1 is a 650 V N-Channel power MOSFET in a PG-TO220-3-111 package. This device features a low on-resistance of 190 mOhm at 7.3A and 10V, with a continuous drain current capability of 17.5A (Tc) at 25°C. With a gate charge of 68 nC (Max) at 10V and input capacitance of 1850 pF (Max) at 100V, it is suitable for demanding power conversion applications. The device offers a maximum power dissipation of 34W (Tc) and operates across a wide temperature range from -55°C to 150°C (TJ). This component is commonly utilized in switch-mode power supplies, industrial power systems, and server power applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 730µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |