IPA65R190C6XKSA1
MOSFET N-CH 650V 20.2A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPA65R190C6XKSA1 is a 650 V N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance (Rds(on)) of 190 mOhm at 7.3 A and 10 V gate drive, facilitating reduced conduction losses. With a continuous drain current of 20.2 A at 25°C (Tc) and a maximum power dissipation of 34 W (Tc), it is suitable for demanding power supply designs. The IPA65R190C6XKSA1 utilizes a TO-220-3 Full Pack package (PG-TO220-3-111) for through-hole mounting, offering robust thermal performance. Key parameters include a gate charge (Qg) of 73 nC at 10 V and an input capacitance (Ciss) of 1620 pF at 100 V. This component finds application in industries such as industrial power supplies, lighting, and consumer electronics, where high voltage and efficient switching are critical. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |