IPA65R150CFDXKSA1
MOSFET N-CH 650V 22.4A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA65R150CFDXKSA1 is a 650V N-Channel CoolMOS™ MOSFET in a PG-TO220-3-111 package. This component features a continuous drain current of 22.4A (Tc) and a maximum power dissipation of 34.7W (Tc). The Rds On is specified at 150mOhm maximum at 9.3A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 86 nC maximum at 10V and input capacitance (Ciss) of 2340 pF maximum at 100V. The device operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage range of ±20V. This MOSFET is suitable for applications in power supply, industrial, and automotive sectors requiring high voltage and efficient switching performance.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | PG-TO220-3-111 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V |