IPA60R950C6XKSA1
MOSFET N-CH 600V 4.4A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPA60R950C6XKSA1, an N-channel CoolMOS™ Power MOSFET. This component features a drain-source voltage of 600V and a continuous drain current of 4.4A at 25°C (Tc). With a maximum power dissipation of 26W (Tc), it offers a low on-resistance of 950mOhm at 1.5A and 10V. The IPA60R950C6XKSA1 has a gate charge of 13 nC at 10V and input capacitance of 280 pF at 100V. Designed for through-hole mounting in a TO-220-3 Full Pack (PG-TO220-FP) package, this device operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power supply applications, including server power, industrial power, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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