IPA60R800CEXKSA1
MOSFET N-CH 600V 5.6A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPA60R800CEXKSA1 is a CoolMOS™ CE series N-channel Power MOSFET. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.6A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 800mOhm at 2A and 10V gate-source voltage. With a gate charge (Qg) of 17.2 nC at 10V and input capacitance (Ciss) of 373 pF at 100V, it is suitable for power factor correction (PFC) and switch-mode power supplies (SMPS). The IPA60R800CEXKSA1 is housed in a PG-TO220-FP package, allowing for through-hole mounting. It offers a maximum power dissipation of 27W at 25°C (Tc) and operates within a temperature range of -40°C to 150°C (TJ). This MOSFET is commonly utilized in server power supplies, industrial power supplies, and lighting applications.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
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