IPA60R750E6XKSA1
MOSFET N-CH 600V 5.7A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPA60R750E6XKSA1 is an N-Channel Power MOSFET designed for demanding applications requiring high voltage and efficiency. This component features a 600 V breakdown voltage (Vdss) and a continuous drain current of 5.7 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 750 mOhm at 2 A and 10 V, it minimizes conduction losses. The IPA60R750E6XKSA1 offers a gate charge (Qg) of 17.2 nC at 10 V and an input capacitance (Ciss) of 373 pF at 100 V. It is housed in a PG-TO220-FP package for through-hole mounting, providing a power dissipation capability of 27 W at 25°C (Tc). This Infineon Technologies MOSFET is suitable for use in power supply units, lighting, and industrial applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
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