IPA60R600E6XKSA1
MOSFET N-CH 600V 7.3A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R600E6XKSA1 is a N-Channel CoolMOS™ Power MOSFET featuring a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 7.3 A at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 600 mOhm at 2.4 A and 10 V, with a gate charge (Qg) of 20.5 nC at 10 V. The input capacitance (Ciss) is rated at 440 pF at 100 V. Designed for through-hole mounting, it is housed in a PG-TO220-FP (TO-220-3 Full Pack) package. The IPA60R600E6XKSA1 is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and general purpose power conversion. It operates across a wide temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 28 W (Tc).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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