IPA60R520E6XKSA1
MOSFET N-CH 600V 8.1A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPA60R520E6XKSA1, offers a 600V drain-source breakdown voltage and 8.1A continuous drain current at 25°C (Tc). This through-hole component features a low on-resistance of 520mO at 2.8A and 10V Vgs, with a gate charge of 23.4 nC at 10V. Its input capacitance (Ciss) is 512 pF at 100V. The device is housed in a TO-220-3 Full Pack (PG-TO220-FP) package, providing 29W of power dissipation at 25°C (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power factor correction, switched-mode power supplies, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V |
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