IPA60R520C6XKSA1
MOSFET N-CH 600V 8.1A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R520C6XKSA1 is an N-channel CoolMOS™ Power MOSFET designed for high-voltage applications. This component features a 600V drain-source breakdown voltage and a continuous drain current of 8.1A at 25°C (Tc). The IPA60R520C6XKSA1 offers a maximum on-resistance of 520mOhm at 2.8A and 10V gate-source voltage. Its low input capacitance of 512pF (Ciss) at 100V and a gate charge of 23.4nC at 10V contribute to efficient switching performance. The device is housed in a PG-TO220-FP package, suitable for through-hole mounting, and has a maximum power dissipation of 29W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in power factor correction, switch-mode power supplies, and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V |
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