IPA60R460CEXKSA1
MOSFET N-CH 600V 9.1A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, IPA60R460CEXKSA1. This 600V device features a continuous drain current of 9.1A at 25°C (Tc) and a maximum power dissipation of 30W (Tc). With a low on-resistance of 460mOhm at 3.4A and 10V, it is suitable for high-voltage applications. Key parameters include a gate charge of 28 nC at 10V and input capacitance of 620 pF at 100V. The IPA60R460CEXKSA1 is housed in a PG-TO220-FP package for through-hole mounting and operates within a temperature range of -40°C to 150°C (TJ). This component is commonly utilized in power supply units, lighting, and consumer electronics.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V |
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