IPA60R450E6XKSA1
MOSFET N-CH 600V 9.2A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R450E6XKSA1, an N-Channel Power MOSFET from the CoolMOS™ series, offers a 600V breakdown voltage and a continuous drain current capability of 9.2A at 25°C (Tc). This device features a maximum Rds(on) of 450mOhm at 3.4A and 10V Vgs, with a gate charge (Qg) of 28 nC at 10V. The input capacitance (Ciss) is rated at 620 pF maximum at 100V. Packaged in a PG-TO220-FP through-hole configuration, the IPA60R450E6XKSA1 has a maximum power dissipation of 30W (Tc) and an operating temperature range of -55°C to 150°C (TJ). Its robust construction and performance characteristics make it suitable for applications in power supply units, lighting, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 100 V |
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