IPA60R360CFD7XKSA1
MOSFET N-CH 650V 5A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CFD7 series N-Channel Power MOSFET IPA60R360CFD7XKSA1 offers a 650V drain-source voltage rating and a continuous drain current of 5A at 25°C (Tc). This device features a low on-resistance of 360mOhm maximum at 2.9A, 10V, and a gate charge of 14nC (typ) at 10V. The input capacitance (Ciss) is rated at a maximum of 679pF at 400V. Designed for through-hole mounting in a PG-TO220 Full Pack package, this MOSFET has a maximum power dissipation of 23W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 140µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 679 pF @ 400 V |
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