IPA60R330P6XKSA1
MOSFET N-CH 600V 12A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPA60R330P6XKSA1 is a 600V N-channel CoolMOS™ P6 series power MOSFET. This device offers a continuous drain current of 12A (Tc) and a maximum power dissipation of 32W (Tc). Key parameters include a Vgs(th) of 4.5V @ 370µA and a low on-resistance of 330mOhm @ 4.5A, 10V. The input capacitance (Ciss) is 1010 pF @ 100V, with a gate charge (Qg) of 22 nC @ 10V. Designed for through-hole mounting, it utilizes the PG-TO220-FP package. This MOSFET is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 370µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 100 V |
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