IPA60R280P7SE8228XKSA1
MOSFET N-CH 600V 12A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPA60R280P7SE8228XKSA1. This device features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12 A at 25°C (Tc). The IPA60R280P7SE8228XKSA1 offers a maximum On-Resistance (Rds On) of 280 mOhm at 3.8 A and 10 V gate drive. With a maximum power dissipation of 24 W (Tc), this MOSFET is suitable for applications requiring high voltage and efficient switching. Key parameters include a gate charge (Qg) of 18 nC at 10 V and input capacitance (Ciss) of 761 pF at 400 V. The component is housed in a PG-TO220-FP package, designed for through-hole mounting. Operating temperature range is -40°C to 150°C (TJ). This device is utilized in power supply units and industrial applications.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 190µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 761 pF @ 400 V |
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