IPA60R280E6XKSA1
MOSFET N-CH 600V 13.8A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R280E6XKSA1 is a 600V N-Channel Power MOSFET from the CoolMOS™ series. This component features a maximum continuous drain current of 13.8A at 25°C (Tc) and a low on-resistance of 280mOhm at 6.5A and 10V. With a gate charge (Qg) of 43 nC at 10V and input capacitance (Ciss) of 950 pF at 100V, it is optimized for high-frequency switching applications. The device is housed in a TO-220-3 Full Pack package and supports through-hole mounting. Key parameters include a Vgs(th) of 3.5V and a maximum Vgs of ±20V. This component is suitable for use in power supply units, adapters, and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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