IPA60R280C6XKSA1
MOSFET N-CH 600V 13.8A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R280C6XKSA1 is an N-Channel CoolMOS™ MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 13.8 A at 25°C (Tc). The IPA60R280C6XKSA1 offers a low on-resistance (Rds On) of 280 mOhm at 6.5 A and 10 V (Vgs). Key parameters include a Gate Charge (Qg) of 43 nC at 10 V and an Input Capacitance (Ciss) of 950 pF at 100 V. The device is packaged in a PG-TO220-FP (TO-220-3 Full Pack) with a through-hole mounting type. With a maximum power dissipation of 32W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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