IPA60R250CPXKSA1
MOSFET N-CH 650V 12A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPA60R250CPXKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a typical on-resistance (Rds On) of 250mOhm at 7.8A and 10V gate-source voltage. With a maximum power dissipation of 33W (Tc) and a junction temperature range of -55°C to 150°C, it is suitable for demanding power conversion tasks. The IPA60R250CPXKSA1 is packaged in a PG-TO220-3-31 (TO-220-3 Full Pack) for through-hole mounting. Key parameters include a gate charge (Qg) of 35 nC and input capacitance (Ciss) of 1300 pF. This MOSFET is utilized in power electronics, including switch-mode power supplies and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 100 V |
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