IPA60R1K5CEXKSA1
IPA60R1K5 - 600V, N-CHANNEL POWEManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R1K5CEXKSA1 is a 600V N-channel Power MOSFET from the CoolMOS™ series. This component features a continuous drain current of 5A at 25°C and a maximum power dissipation of 20W (Tc). The Drain to Source Voltage (Vdss) is 600V, with a maximum Rds On of 1.5Ohm at 1.1A and 10V. Gate charge (Qg) is specified at 9.4 nC at 10V, and input capacitance (Ciss) is a maximum of 200 pF at 100V. The device is supplied in a PG-TO220-FP package for through-hole mounting. Typical applications for this MOSFET include power factor correction, switch mode power supplies, and general purpose power switching in the consumer electronics, industrial automation, and lighting sectors.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
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