IPA60R190C6XKSA1
MOSFET N-CH 600V 20.2A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA60R190C6XKSA1 is a 600V N-Channel CoolMOS™ Power Transistor in a PG-TO220-FP package. This device offers a continuous drain current of 20.2A at 25°C (Tc) and a maximum power dissipation of 34W (Tc). Key parameters include a low on-resistance of 190mOhm at 9.5A and 10V, a gate charge of 63 nC at 10V, and an input capacitance of 1400 pF at 100V. Engineered for high-efficiency power conversion, this MOSFET is suitable for applications in power supplies, lighting, and industrial systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
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