IPA60R165CPXKSA1
MOSFET N-CH 600V 21A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, IPA60R165CPXKSA1, offers 600V drain-source voltage and 21A continuous drain current at 25°C case temperature. This device features a low on-resistance of 165mOhm maximum at 12A and 10V gate-source voltage. With a maximum power dissipation of 34W at 25°C case temperature and a gate charge of 52nC at 10V, it is suitable for demanding power applications. The IPA60R165CPXKSA1 is housed in a TO-220-3 Full Pack (PG-TO220-FP) package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C. This component is utilized in power factor correction, server and telecom power supplies, and industrial power applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
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