IPA60R160C6XKSA1
MOSFET N-CH 600V 23.8A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA60R160C6XKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This device offers a 600V drain-source breakdown voltage and a continuous drain current capability of 23.8A at 25°C (Tc). With a maximum Rds(on) of 160mOhm at 11.3A and 10V gate-source voltage, it is optimized for efficient power conversion. The component features a low gate charge of 75 nC (max) at 10V and an input capacitance (Ciss) of 1660 pF (max) at 100V. This through-hole mounted device comes in a PG-TO220-FP package, providing a maximum power dissipation of 34W (Tc). It is suitable for applications in power supplies, server power, industrial power, and lighting. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 750µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
