IPA50R950CE
MOSFET N-CH 500V 4.3A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPA50R950CE, an N-Channel CoolMOS™ Power MOSFET. This component features a 500V drain-source voltage (Vdss) and a continuous drain current of 4.3A at 25°C (Tc). The IPA50R950CE offers a maximum on-resistance of 950mOhm at 1.2A and 13V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 10.5nC (max) at 10V and input capacitance (Ciss) of 231pF (max) at 100V. With a maximum power dissipation of 25.7W (Tc), this device is housed in a PG-TO220-3-31 package suitable for through-hole mounting. Operating temperature range is -40°C to 150°C (TJ). This MOSFET is commonly utilized in power supply applications, motor control, and lighting solutions.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 25.7W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
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