IPA50R800CE
MOSFET N-CH 500V 5A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA50R800CE is an N-Channel CoolMOS™ Power MOSFET with a Drain-Source Voltage (Vdss) of 500 V. This through-hole component, housed in a PG-TO220-FP package, offers a continuous drain current (Id) of 5 A (Tc) and a maximum power dissipation of 26.4 W (Tc). Key electrical characteristics include a maximum Rds On of 800 mOhm at 1.5 A, 13 V, and a gate charge (Qg) of 12.4 nC at 10 V. Input capacitance (Ciss) is rated at a maximum of 280 pF at 100 V. This device is suitable for applications in power supplies, industrial power systems, and lighting. It operates across an extended temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 26.4W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |