IPA50R650CEXKSA2
MOSFET N-CH 500V 4.6A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA50R650CEXKSA2 is an N-Channel Power MOSFET from the CoolMOS™ CE series. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain current (Id) of 4.6A (Tc) at 25°C. The IPA50R650CEXKSA2 offers a low on-resistance (Rds On) of 650mOhm at 1.8A and 13V. Key parameters include a Gate Charge (Qg) of 15 nC at 10V and an Input Capacitance (Ciss) of 342 pF at 100V. The device is housed in a PG-TO220-3-FP package for through-hole mounting. Maximum power dissipation is rated at 27.2W (Tc). This MOSFET is suitable for applications in power supplies and lighting. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 27.2W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO220-3-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V |
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