IPA50R650CE
MOSFET N-CH 500V 6.1A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPA50R650CE is a 500V N-channel MOSFET designed for high-efficiency power conversion applications. This component features a low on-resistance of 650mOhm at 1.8A and 13V, minimizing conduction losses. With a continuous drain current of 6.1A (Tc) and a maximum power dissipation of 27.2W (Tc), it is suitable for demanding power supply designs. The IPA50R650CE boasts a gate charge of 15 nC (max) at 10V and input capacitance of 342 pF (max) at 100V, enabling fast switching performance. Packaged in a TO-220-3 Full Pack with a through-hole mounting type, this device operates efficiently across a wide temperature range of -40°C to 150°C (TJ). Its robust design makes it a reliable choice for industrial power supplies, server power, and consumer electronics.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 27.2W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V |
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