IPA50R520CPXKSA1
MOSFET N-CH 500V 7.1A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPA50R520CPXKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 7.1A at 25°C (Tc). With a maximum power dissipation of 66W (Tc), it is designed for efficient operation. The Rds On is specified as a maximum of 520mOhm at 3.8A and 10V Vgs. Key parameters include a gate charge (Qg) of 17 nC @ 10V and input capacitance (Ciss) of 680 pF @ 100V. The device operates within a temperature range of -40°C to 150°C (TJ) and is housed in a PG-TO220-3-31 package suitable for through-hole mounting. This MOSFET is commonly employed in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 100 V |
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