IPA50R500CE
MOSFET N-CH 500V 7.6A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA50R500CE is a 500V N-Channel Power MOSFET from the CoolMOS™ series. This component features a continuous drain current of 7.6A (Tc) and a low Rds On of 500mOhm maximum at 2.3A and 13V drive voltage. The IPA50R500CE boasts an input capacitance (Ciss) of 433pF maximum at 100V and a gate charge (Qg) of 18.7nC maximum at 10V. It is packaged in a TO-220-3 Full Pack (PG-TO220-3-31) with a through-hole mounting type. With a maximum power dissipation of 28W (Tc) and an operating temperature range of -40°C to 150°C (TJ), this MOSFET is suitable for applications in power supplies, lighting, and industrial automation.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 433 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
