IPA50R399CPXKSA1
MOSFET N-CH 500V 9A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA50R399CPXKSA1 is an N-Channel Power MOSFET from the CoolMOS™ series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 9A at 25°C (Tc). The device exhibits a typical Rds On of 399mOhm at 4.9A and 10V. With a maximum power dissipation of 83W (Tc), it is housed in a PG-TO220-3-31 package suitable for through-hole mounting. Key parameters include a Gate Charge (Qg) of 23 nC @ 10 V and an Input Capacitance (Ciss) of 890 pF @ 100 V. This MOSFET is engineered for applications demanding high voltage and efficient switching, commonly found in power supply units and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 100 V |
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