IPA50R380CE
MOSFET N-CH 500V 9.9A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA50R380CE, a CoolMOS™ N-Channel Power MOSFET, is designed for high-efficiency power conversion applications. This component features a 500V drain-source breakdown voltage and a continuous drain current capability of 9.9A at 25°C (Tc). Its low on-resistance, specified as a maximum of 380mOhm at 3.2A and 13V gate-source voltage, contributes to reduced conduction losses. The IPA50R380CE offers a gate charge of 24.8 nC at 10V and an input capacitance of 584 pF at 100V, facilitating efficient switching performance. Packaged in a PG-TO220-FP (TO-220-3 Full Pack) for through-hole mounting, it supports a maximum power dissipation of 29.2W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, lighting, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 29.2W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 260µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 100 V |
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