IPA50R350CPXKSA1
MOSFET N-CH 500V 10A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA50R350CPXKSA1 is a 500V N-channel Power MOSFET from the CoolMOS™ series. This component features a continuous drain current of 10A (Tc) and a maximum power dissipation of 32W (Tc). The Rds(on) is specified at 350mOhm at 5.6A and 10V gate drive. Key parameters include a gate charge of 25 nC (Max) @ 10V and input capacitance of 1020 pF (Max) @ 100V. The device is housed in a PG-TO220-3-31 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This technology is widely utilized in power supply units, lighting, and industrial applications requiring high voltage switching performance.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 100 V |