IPA50R299CPXKSA1
MOSFET N-CH 550V 12A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPA50R299CPXKSA1 is a CoolMOS™ N-Channel Power Transistor. This device offers a 550V drain-source breakdown voltage and a continuous drain current of 12A at 25°C (Tc). The IPA50R299CPXKSA1 features a low on-resistance of 299mOhm at 6.6A and 10V Vgs. With a maximum power dissipation of 104W (Tc), it is designed for high-efficiency applications. Key parameters include a gate charge of 31 nC at 10V and input capacitance (Ciss) of 1190 pF at 100V. The component is housed in a PG-TO220-3-31 package, suitable for through-hole mounting. This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 100 V |
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