IPA50R280CE
MOSFET N-CH 500V 13A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPA50R280CE, offers a drain-source voltage of 500 V and a continuous drain current of 13 A at 25°C. Featuring a maximum on-resistance of 280 mOhm at 4.2 A and 13 V gate-source voltage, this device utilizes a robust TO-220-3 Full Pack package suitable for through-hole mounting. Key parameters include a gate charge of 32.6 nC at 10 V and input capacitance of 773 pF at 100 V. The IPA50R280CE is designed for applications requiring high voltage and efficient switching, commonly found in power supply units, lighting, and industrial motor control systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 30.4 W at the case temperature.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 30.4W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 350µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 773 pF @ 100 V |
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