IPA50R199CPXKSA1
MOSFET N-CH 500V 17A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA50R199CPXKSA1, an N-Channel CoolMOS™ Power MOSFET, offers a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc). This device features a low on-resistance (Rds On) of 199mOhm at 9.9A and 10V, with a gate charge (Qg) of 45 nC at 10V. The input capacitance (Ciss) is a maximum of 1800 pF at 100V. Designed with a maximum power dissipation of 139W (Tc), this MOSFET supports a gate-to-source voltage (Vgs) range of ±20V, and a threshold voltage (Vgs(th)) of 3.5V at 660µA. The IPA50R199CPXKSA1 is housed in a PG-TO220-3-31 package for through-hole mounting and operates within an industrial temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 100 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
