IPA320N20NM3SXKSA1
MOSFET N-CH 200V 26A TO220Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™3 IPA320N20NM3SXKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 200V drain-source breakdown voltage and a continuous drain current capability of 26A at 25°C (Tc). With a maximum on-resistance (Rds On) of 32mOhm at 26A and 10V, it offers low conduction losses. The IPA320N20NM3SXKSA1 boasts a maximum power dissipation of 38W (Tc) and a gate charge (Qg) of 30nC at 10V. It is housed in a PG-TO220 Full Pack package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in industrial, automotive, and telecommunication power supply circuits.
Additional Information
Series: OptiMOS™3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 89µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V |
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