IPA180N10N3GXKSA1
MOSFET N-CH 100V 28A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA180N10N3GXKSA1 is an N-channel Power MOSFET from the OptiMOS™ series. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 28 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 18 mOhm at 28 A and 10 V gate-source voltage (Vgs), it offers efficient power handling with a maximum power dissipation of 30 W (Tc). The IPA180N10N3GXKSA1 utilizes Metal Oxide technology and is supplied in a PG-TO220-FP package suitable for through-hole mounting. Key parameters include a typical gate charge (Qg) of 25 nC at 10 V and an input capacitance (Ciss) of 1800 pF at 50 V. This device is designed for applications in industrial power supplies and motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 35µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
