IPA126N10N3GXKSA1
MOSFET N-CH 100V 35A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPA126N10N3GXKSA1, an N-Channel OptiMOS™ MOSFET designed for demanding power applications. This component features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 35 A at 25°C (Tc). With a low on-resistance (Rds On) of 12.6 mOhm at 35 A and 10 V Vgs, coupled with a maximum power dissipation of 33 W (Tc), it offers efficient power handling. The device is housed in a PG-TO220 Full Pack package, suitable for through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 2500 pF at 50 V and a gate charge (Qg) of 35 nC at 10 V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is utilized in various industrial sectors, including automotive and power supply designs.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 45µA |
| Supplier Device Package | PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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