IPA105N15N3GXKSA1
MOSFET N-CH 150V 37A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPA105N15N3GXKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 37 A at 25°C (Tc). The Rds On is specified at a maximum of 10.5 mOhm when conducting 37 A with a 10 V gate-source voltage. Designed for through-hole mounting within a PG-TO220-FP package, this device offers a maximum power dissipation of 40.5 W (Tc). Key characteristics include an input capacitance (Ciss) of 4300 pF at 75 V and a gate charge (Qg) of 55 nC at 10 V. The IPA105N15N3GXKSA1 is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 160µA |
| Supplier Device Package | PG-TO220-FP |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 75 V |
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